Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2005-05-17
2005-05-17
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S287000, C438S591000, C438S785000
Reexamination Certificate
active
06893910
ABSTRACT:
A method for forming a semiconductor structure removes the temporary gate formed on the dielectric layer to expose a recess in which oxygen-rich CVD oxide is deposited. A tantalum layer is then deposited by low-power physical vapor deposition on the CVD oxide. Annealing is then performed to create a Ta2O5region and a Ta region from the deposited oxide and Ta. This creates a low carbon-content Ta2O5and a metallic Ta gate in a single process step.
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Besser Paul R.
Mei-Chu Woo Christy
Ngo Minh Van
Pan James N.
Yin Jinsong
Advanced Micro Devices , Inc.
Lebentritt Michael
Pompey Ron
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