Reducing the migration of grain boundaries

Details Reducing the migration of grain boundaries Reducing the migration of grain boundaries

2005-10-18

2005-10-18

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S607000, C438S687000, C438S689000, C438S691000, C257S758000, C257S762000, C257S765000, C257S767000, C257S771000

Reexamination Certificate

active

06955980

ABSTRACT:
A method of forming a semiconductor device includes implanting a precipitate into a gate conductor of an at least partially formed semiconductor device. The gate conductor including a plurality of semiconductor grains. The boundaries of adjacent grains forming a dopant migration path. A plurality of precipitate regions are formed within the gate conductor. At least some of the precipitate regions located at a junction of at least two grains. The gate conductor of the at least partially formed semiconductor device is doped with a dopant. The dopant diffuses inwardly along the dopant migration path.

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