Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-31
2005-05-31
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000
Reexamination Certificate
active
06900488
ABSTRACT:
The present invention provides a multi-cell organic memory device that can operate as a non-volatile memory device having a plurality of multi-cell structures constructed within the memory device. A lower electrode can be formed, wherein one or more passive layers are formed on top of the lower electrode. An Inter Layer Dielectric (ILD) is formed above the passive layers and lower electrode, whereby a via or other type relief is created within the ILD and an organic semiconductor material is then utilized to partially fill the via above the passive layer. The portions of the via that are not filled with organic material are filled with dielectric material, thus forming a multi-dimensional memory structure above the passive layer or layers and the lower electrode. One or more top electrodes are then added above the memory structure, whereby distinctive memory cells are created within the organic portions of the memory structure and activated (e.g., read/write) between the top electrodes and bottom electrode, respectively. In this manner, multiple storage cells can be formed within a singular organic structure thereby increasing memory device density and storage.
REFERENCES:
patent: 6380574 (2002-04-01), Torii et al.
Chang Mark S.
Cheung Patrick K.
Lopatin Sergey D.
Ngo Minh Van
Advanced Micro Devices , Inc.
Amin & Turocy LLP
Le Dung A.
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