Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-05-24

2005-05-24

Lebentritt, Michael (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S210000, C438S058000, C438S059000, C438S200000

Reexamination Certificate

active

06897117

ABSTRACT:
A transistor of a semiconductor device has an increased driving capacity. The semiconductor device has a first gate insulation film formed by a selective oxidation, a second gate insulation film formed by thermal oxidation and a gate electrode formed across the first and the second gate insulation films. The second gate insulation film is composed of a thicker gate insulation film and a thinner gate insulation film.

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