Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-02-15

2005-02-15

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S232000, C438S511000, C438S648000

Reexamination Certificate

active

06855592

ABSTRACT:
A method for manufacturing a semiconductor device is disclosed, in which characteristics of the semiconductor device and an operation speed are improved. In forming sidewall spacers at both sides of a gate electrode, a semiconductor substrates is partially removed at both sides of the sidewall spacer by controlling an etch gas, and then a process for forming a silicide layer is performed, thereby increasing a distance between the silicide layer and a channel. Accordingly, it is possible to decrease a resistance material between the silicide layer and the channel region.

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