Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-11
2005-10-11
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S217000, C438S224000
Reexamination Certificate
active
06953718
ABSTRACT:
A method is provided for manufacturing a semiconductor device having a high breakdown voltage transistor and a low breakdown voltage transistor with different driving voltages in a common substrate. A method for manufacturing the semiconductor device includes: (a) forming a first well including an impurity of a second conductivity type in a specified region of a semiconductor substrate of a first conductivity type; (b) forming a first impurity layer in a specified region of the first well by introducing an impurity of the first conductivity type by ion implantation; (c) forming a second impurity layer in a specified region of a semiconductor layer of the first conductivity type by introducing an impurity of the second conductivity type by ion implantation; and (d) diffusing impurities of the first impurity layer and the second impurity layer by a heat treatment to form a second well of the first conductivity type in the first well, and forming well-shaped offset layers of a source/drain layer of the second conductivity type.
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Wolf and Tauber; “Silicon Processing for the VLSI Era vol. 1: Process Technology”; p. 242; 1986 Lattice Press; Sunset Beach, CA.
Fourson George
Harness & Dickey & Pierce P.L.C.
Toledo Fernando L.
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