Method for forming narrow trench structures

Details Method for forming narrow trench structures Method for forming narrow trench structures

2005-08-23

2005-08-23

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S443000

Reexamination Certificate

active

06933187

ABSTRACT:
A method for forming narrow trench structures. A substrate covered by a layer to be defined is provided. A plurality of oxidable first masking islands is formed on the layer to be defined. Thereafter, the first masking islands are oxidized to form an oxide layer on the sidewall and the upper surface of each first masking island. A second masking island is formed in each gap between the oxidized first masking islands. The oxide layers are subsequently removed to form narrow openings between the first and second masking islands, having a width substantially equal to the thickness of the removed oxide layer. The layer to be defined underlying the narrow openings is etched to form the narrow trench structures on the substrate. Finally, the first and second masking islands are removed.

REFERENCES:
patent: 4057824 (1977-11-01), Woods
patent: 5254218 (1993-10-01), Roberts et al.
patent: 5750432 (1998-05-01), McLachlan
patent: 6197627 (2001-03-01), Kishi
patent: 6355528 (2002-03-01), Ishida et al.

Affiliated with

Also associated with

Rating

Method for forming narrow trench structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming narrow trench structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming narrow trench structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3446340