Formation of composite tungsten films

Details Formation of composite tungsten films Formation of composite tungsten films

2005-09-06

2005-09-06

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C117S084000, C117S088000, C427S255280, C438S685000

Reexamination Certificate

active

06939804

ABSTRACT:
Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

REFERENCES:
patent: 5306666 (1994-04-01), Izumi
patent: 5916365 (1999-06-01), Sherman
patent: 6042652 (2000-03-01), Hyun et al.
patent: 6139700 (2000-10-01), Kang et al.
patent: 6156382 (2000-12-01), Rajagopalan et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207487 (2001-03-01), Kim et al.
patent: 6218298 (2001-04-01), Hoinkis
patent: 6270572 (2001-08-01), Kim et al.
patent: 6284646 (2001-09-01), Leem
patent: 6287965 (2001-09-01), Kang et al.
patent: 6305314 (2001-10-01), Sneh et al.
patent: 6333260 (2001-12-01), Kwon et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6355561 (2002-03-01), Sandhu et al.
patent: 6358829 (2002-03-01), Yoon et al.
patent: 6368954 (2002-04-01), Lopatin et al.
patent: 6369430 (2002-04-01), Adetutu et al.
patent: 6372598 (2002-04-01), Kang et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6399491 (2002-06-01), Jeon et al.
patent: 6420189 (2002-07-01), Lopatin
patent: 6423619 (2002-07-01), Grant et al.
patent: 6447933 (2002-09-01), Wang et al.
patent: 6451119 (2002-09-01), Sneh et al.
patent: 6451695 (2002-09-01), Sneh
patent: 6468924 (2002-10-01), Lee et al.
patent: 6475276 (2002-11-01), Elers et al.
patent: 6475910 (2002-11-01), Sneh
patent: 6482262 (2002-11-01), Elers et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6551929 (2003-04-01), Kori et al.
patent: 6635965 (2003-10-01), Lee et al.
patent: 2001/0000866 (2001-05-01), Sneh et al.
patent: 2001/0002280 (2001-05-01), Sneh et al.
patent: 2001/0009695 (2001-07-01), Saanila et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2001/0029094 (2001-10-01), Mee-Young et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2001/0054769 (2001-12-01), Raaijmakers et al.
patent: 2002/0004293 (2002-01-01), Soininen et al.
patent: 2002/0019121 (2002-02-01), Pyo
patent: 2002/0031618 (2002-03-01), Sherman
patent: 2002/0037630 (2002-03-01), Agarwal et al.
patent: 2002/0048880 (2002-04-01), Lee
patent: 2002/0055235 (2002-05-01), Agarwal et al.
patent: 2002/0061612 (2002-05-01), Sandhu et al.
patent: 2002/0076507 (2002-06-01), Chiang et al.
patent: 2002/0086507 (2002-07-01), Park et al.
patent: 2002/0090829 (2002-07-01), Sandhu et al.
patent: 2002/0105088 (2002-08-01), Yang et al.
patent: 2002/0106846 (2002-08-01), Seutter et al.
patent: 2002/0109168 (2002-08-01), Kim et al.
patent: 2002/0117399 (2002-08-01), Chen et al.
patent: 2002/0121697 (2002-09-01), Marsh
patent: 2002/0155722 (2002-10-01), Satta et al.
patent: 2002/0162506 (2002-11-01), Sneh et al.
patent: 2003/0031807 (2003-02-01), Elers et al.
patent: 2003/0032281 (2003-02-01), Werkhoven et al.
patent: 2003/0049942 (2003-03-01), Haukka et al.
patent: 2003/0072975 (2003-04-01), Shero et al.
patent: 98/51838 (1998-11-01), None
patent: 00/54320 (2000-09-01), None
patent: 00/70673 (2000-11-01), None
patent: 01/15220 (2001-03-01), None
patent: 01/27346 (2001-04-01), None
patent: 01/27347 (2001-04-01), None
patent: 01/29280 (2001-04-01), None
patent: 01/29891 (2001-04-01), None
patent: 01/29893 (2001-04-01), None
patent: 01/66832 (2001-09-01), None
patent: 02/45167 (2002-06-01), None
patent: 02/067319 (2002-08-01), None
Yang, et al. “Atomic Layer Deposition of Tungsten Film from WF6/B2H6:Nucleation Layer for Advanced Semiconductor Devices” Advanced Metallization Conference, Oct. 8, 2001, pp. 655-660.
PCT International Search Report for US/02/22585 dated Aug. 21, 2003. (AMAT/6294PC).
Klaus, et al., “Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions,” Applied Surface Science 162-163 (2000) 479-491.
“Pulsed Nucleation for Ultra-High Aspect Ratio Tungsten Plugfill”; San-Hyeob Lee, et. al; Materials Research Society, 2002, 649-653.

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