Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-15
2005-03-15
Flynn, Nathan J. (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S386000, C257S068000, C257S301000, C257S552000
Reexamination Certificate
active
06867090
ABSTRACT:
By using a solid solution of tantalum pentoxide and niobium pentoxide as a dielectric film installed between upper electrode and lower electrode in a capacitor which is used in a semiconductor device, the capacitor structure can be simplified to improve reliability of the semiconductor device while reducing the production cost thereof.
REFERENCES:
patent: 5520992 (1996-05-01), Douglas et al.
patent: 6222722 (2001-04-01), Fukuzumi et al.
patent: A3136361 (1991-06-01), None
patent: 5090219 (1993-04-01), None
patent: 9-2869 (1997-01-01), None
patent: 9142844 (1997-06-01), None
patent: 10-93051 (1998-04-01), None
patent: 10-182221 (1998-07-01), None
patent: 10247723 (1998-09-01), None
patent: 11-16624 (1999-01-01), None
patent: 11251550 (1999-09-01), None
1999 Symposium onVISI Technology, Digest of Technical Papers, pp. 99-100.
Journal of Research of the National Bureau of Standards, vol. 72A, 1968, pp. 175-186.
Acta Cryst. vol. 14, 1961, pp. 1278-1281.
Japanese Journal of Applied Physics, vol. 6, 1967, pp. 21-34.
Sov. Phys. Cyrstallogr. vol. 24, 1979, pp. 537-539.
Sov. Phys. Crystallogr. vol. 25, 1980, pp. 669-672.
Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, pp. 198-200.
Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials, pp. 36-37.
Hamada Tomoyuki
Hiratani Masahiko
Kimura Shin'ichiro
Flynn Nathan J.
Hitachi , Ltd.
Mattingly Stanger & Malur, P.C.
Wilson Scott R
LandOfFree
Semiconductor device and method of manufacturing thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3441997