Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-04-12

2005-04-12

Wilson, Allan R. (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S143000, C438S514000, C438S543000, C438S904000, C438S917000, C438S752000, C438S933000, C257S019000, C257S388000, C257S412000, C257S151000, C257S407000, C257S616000, C257S611000, C257S607000, C257S402000, C257S020000, C257S364000

Reexamination Certificate

active

06878579

ABSTRACT:
An aspect of the present invention includes a first conductive type semiconductor region; a gate electrode formed on the first conductive type semiconductor region; a channel region formed immediately below the gate electrode in the first conductive type semiconductor region; and a second conductive type first diffusion layer constituting source/drain regions formed at opposite sides of the channel region in the first conductive type semiconductor region, the gate electrode being formed of polycrystalline silicon-germanium, in which a germanium concentration is continuously increased from a drain region side to a source region side, and an impurity concentration immediately below the gate electrode in the first conductive type semiconductor region being continuously increased from the source region side to the drain region side in accordance with the germanium concentration in the gate electrode.

REFERENCES:
patent: 6630720 (2003-10-01), Maszara et al.
patent: 20020113294 (2002-08-01), Rhee et al.
patent: 20030146494 (2003-08-01), Puchner et al.

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