Self-aligned contact areas for sidewall image transfer...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S778000, C438S612000, C438S620000, C257S759000, C257S774000

Reexamination Certificate

active

06949458

ABSTRACT:
A method and structure for forming a sidewall image transfer conductor having a contact pad includes forming an insulator to include a recess, depositing a conductor around the insulator, and etching the conductor to form the sidewall image transfer conductor, wherein the conductor remains in the recess and forms the contact pad and the recess is perpendicular to the sidewall image transfer conductor.

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patent: 2002/0074540 (2002-06-01), Yokoyama

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