Method of fabricating a stacked capacitor for a...

Details Method of fabricating a stacked capacitor for a... Method of fabricating a stacked capacitor for a...

2005-03-15

2005-03-15

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S254000, C438S396000

Reexamination Certificate

active

06867094

ABSTRACT:
The disclosure describes a stacked capacitor and a method of forming the same. The method prevents a storage node of the stacked capacitor from crumbling due to lack of support, thereby improving the reliability of semiconductor devices that incorporate stacked capacitors. The disclosure also describes a stacked capacitor with a greater capacitance than a stacked capacitor in accordance with the conventional art.

REFERENCES:
patent: 5710075 (1998-01-01), Tseng
patent: 6423608 (2002-07-01), Kim
patent: 6696713 (2004-02-01), Ishibashi
patent: 20010052614 (2001-12-01), Ishibashi

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