Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-24
2005-05-24
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000
Reexamination Certificate
active
06897143
ABSTRACT:
A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1(=removal rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2(=removal rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.
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Wolf, “Silicon Processing for the VLSI Era, vol. 2—Process Integration,” Lattice Press, vol. 2, p. 193.
Fukushima Dai
Kaneko Hisashi
Matsuda Tetsuo
Minamihaba Gaku
Toyoda Hiroshi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Weiss Howard
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