Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-07-05

2005-07-05

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S257000, C438S308000, C438S530000, C438S663000, C438S696000, C438S706000, C438S798000

Reexamination Certificate

active

06913976

ABSTRACT:
Disclosed is a method of manufacturing the semiconductor devices. The method comprising the steps of forming a gate electrode on a semiconductor substrate, depositing an oxide film for a spacer on the gate electrode, implementing an anisotropic dry etch process for the oxide film for the spacer to form spacers at the sidewalls of the gate electrode, and implementing a rapid thermal annealing process for the spacers under an oxygen atmosphere in order to segregate hydrogen contained within the spacers toward the surface. Therefore, hydrogen contained within the spacer oxide film is not diffused into the tunnel oxide film and the film quality of the tunnel oxide film is thus improved. As a result, program or erase operation characteristics of the flash memory device and a retention characteristic of the flash memory device could be improved.

REFERENCES:
patent: 6121138 (2000-09-01), Wieczorek et al.
patent: 6147014 (2000-11-01), Lyding et al.
patent: 6444533 (2002-09-01), Lyding et al.
patent: 2004/0014285 (2004-01-01), Lee et al.
patent: 10-0219416 (1999-06-01), None
Office Action issued by Korean Intellectual Property Office dated Sep. 30, 2004.

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