Method of forming contact plug on silicide structure

Details Method of forming contact plug on silicide structure Method of forming contact plug on silicide structure

2005-04-26

2005-04-26

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S637000, C438S649000, C438S723000, C438S724000, C438S734000, C438S700000, C438S702000, C438S586000

Reexamination Certificate

active

06884736

ABSTRACT:
A method of manufacturing a semiconductor device is provided. A semiconductor element is formed on a substrate. The semiconductor element has at least one nickel silicide contact region, an etch stop layer formed over said element, and an insulating layer formed over said etch stop layer. A portion of the etch stop layer immediately over a selected contact region is removed using a process that does not substantially react with the contact region, to form a contact opening. The contact opening is then filled with a conductive material to form a contact.

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