X-ray or gamma ray systems or devices – Specific application – Lithography
Reexamination Certificate
2005-01-18
2005-01-18
Church, Craig E. (Department: 2882)
X-ray or gamma ray systems or devices
Specific application
Lithography
C378S035000, C378S147000
Reexamination Certificate
active
06845145
ABSTRACT:
The present invention is directed to the production of high quality semi-conductor devices created at speeds and in sizes that far exceed current x-ray lithography capabilities. The steps involved in the method include the use and development of horizontal beams from a synchrotron or point source of x-ray beams; preparation of submicrometer, transverse horizontal and vertical stepper stages and frames; providing a stepper base frame for the proper housing and mating of the x-ray beam; minimizing the effects of temperature and airflow control by means of a environmental chamber; transporting, handling and prealigning wafers and other similar items for tight process control; improving the control and sensing of positional accuracy through the use of differential variable reluctance transducers; controlling the continuous gap and all six degrees of freedom of the wafer being treated with a multiple variable stage control; incorporating alignment systems using unambiguous targets to provide data to align one level to the next level; beam transport, shaping or shaping devices, to include x-ray point sources; using an inline collimator or concentrator for collimating or concentrating the x-ray beams; and, imaging the mask pattern at the precise moment for optimum effectiveness.
REFERENCES:
patent: 5001039 (1991-03-01), Ogoh
patent: 5157700 (1992-10-01), Kurosawa et al.
patent: 5222112 (1993-06-01), Terasawa et al.
patent: 5333166 (1994-07-01), Seligson et al.
patent: 5333167 (1994-07-01), Iizuka et al.
patent: 5497147 (1996-03-01), Arms et al.
patent: 5524131 (1996-06-01), Uzawa et al.
patent: 5666189 (1997-09-01), Rostoker et al.
patent: 5953106 (1999-09-01), Unno et al.
patent: 6038013 (2000-03-01), Ohsaki
patent: 6038279 (2000-03-01), Miyake et al.
patent: 6144719 (2000-11-01), Hasegawa et al.
patent: 6188513 (2001-02-01), Hudyma et al.
Friml William Rudolf
Gagnon Joe Baker
Macklin Robert Harrison
Rauch Franz Ludwig
Selzer Robert Allen
Church Craig E.
Kiknadze Irakli
Leas James Marc
Neiman Thomas N.
SAL, Inc.
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