Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-24
2005-05-24
Pert, Evan (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S758000
Reexamination Certificate
active
06897146
ABSTRACT:
A semiconductor manufacturing equipment wherein degas chamber(s) are integrated to the conventional pass-through chamber location. A preferred embodiment for depositing Cu barrier and seed layers on a semiconductor wafer comprises a front opening unified pod(s), a single wafer loadlock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.
REFERENCES:
patent: 5996353 (1999-12-01), Maxwell et al.
patent: 6136725 (2000-10-01), Loan et al.
patent: 6413858 (2002-07-01), Chopra
Morad Ratson
Shin Ho Seon
Pert Evan
Sarkar Asok Kumar
Stern Robert J.
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