Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2005-01-25
2005-01-25
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Read/write circuit
Precharge
C365S222000, C365S205000
Reexamination Certificate
active
06847566
ABSTRACT:
Methods and circuit configurations for multiple recycling of charge during a refresh operation in a memory device, such as a dynamic random access memory (DRAM) device, are provided. Charge from one or more power lines of a first array of bit line sense amplifiers involved in a first refresh operation may be transferred to one or more power lines of at least second and third arrays of bit line sense amplifiers involved in subsequent refresh operations.
REFERENCES:
patent: 6094389 (2000-07-01), Ahn
patent: 6310814 (2001-10-01), Hampel et al.
patent: 6563757 (2003-05-01), Agata
Han Jong-hee
Kim Jung Pill
Hoang Huan
Infineon - Technologies AG
Moser, Patterson & Sheridan L.L.P.
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