Methods of forming memory cells having self-aligned silicide

Details Methods of forming memory cells having self-aligned silicide Methods of forming memory cells having self-aligned silicide

2005-09-06

2005-09-06

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S264000, C438S267000, C438S266000, C438S592000, C438S593000, C257S413000, C257S414000, C257S415000

Reexamination Certificate

active

06939764

ABSTRACT:
Concurrently forming self-aligned silicides on word lines and contacts of a memory device facilitates reduced resistance and/or reduced device sizing. The word-line silicide is formed at a stage significantly later than in standard processing, decreasing concerns of thermal stability of the silicide, thus allowing the use of lower-resistance silicides. In addition, by forming contacts to drain and/or source regions prior to forming the silicide for the word lines, aspect ratios for the contact holes or trenches are reduced for a given pitch, thus improving effectiveness of processing to remove material from these holes and trenches or allowing the use of a smaller pitch. By providing a process for the application of a silicide in array source interconnects, a single array source interconnect can couple an entire row of memory cells, thereby reducing the number of contacts made to an array ground.

REFERENCES:
patent: 5770507 (1998-06-01), Chen et al.
patent: 6194279 (2001-02-01), Chen et al.
patent: 6204129 (2001-03-01), Hwang et al.
patent: 6207492 (2001-03-01), Tzeng et al.
patent: 6245626 (2001-06-01), Chen et al.
patent: 6291354 (2001-09-01), Hsiao et al.
patent: 6559044 (2003-05-01), Chen et al.
patent: 6617215 (2003-09-01), Halliyal et al.
patent: 6784054 (2004-08-01), Nitta et al.

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