Method of making floating gate non-volatile memory cell with...

Details Method of making floating gate non-volatile memory cell with... Method of making floating gate non-volatile memory cell with...

2005-01-11

2005-01-11

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000

Reexamination Certificate

active

06841445

ABSTRACT:
A non-volatile memory cell of the type which includes at least one floating gate transistor and which is realized over a semiconductor substrate includes a source region, and a drain region, separated by a channel region which is overlaid by a thin layer of gate oxide. The gate oxide isolates a floating gate region from the substrate. The floating gate region is coupled to a control gate terminal. The floating gate region of the memory cell develops a first potential barrier between the semiconductor substrate and the gate oxide layer, and a second different potential barrier between the floating gate region and the gate oxide.

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