Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-05
2005-07-05
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S151000, C438S164000, C438S300000
Reexamination Certificate
active
06913959
ABSTRACT:
A strained semiconductor device suitable for use in an integrated circuit and a method for manufacturing the strained semiconductor device. A mesa isolation structure is formed from a semiconductor-on-insulator substrate. A gate structure is formed on the mesa isolation structure. The gate structure includes a gate disposed on a gate dielectric material and has two sets of opposing sidewalls. Semiconductor material is selectively grown on portions of the mesa isolation structure adjacent a first set of opposing sidewalls of the gate structure and then doped. The doped semiconductor material is silicided and protected by a dielectric material. The gate is silicided wherein the silicide wraps around a second set of opposing sidewalls and stresses a channel region of the semiconductor device.
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Advanced Micro Devices , Inc.
Dover Rennie Wm.
Drake Paul
Gurley Lynne A.
Isaac Stanetta
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