Methods of forming spaced conductive regions, and methods of...

Details Methods of forming spaced conductive regions, and methods of... Methods of forming spaced conductive regions, and methods of...

2005-03-01

2005-03-01

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S396000

Reexamination Certificate

active

06861309

ABSTRACT:
The invention includes a method of forming spaced conductive regions. A construction is formed which includes a first electrically conductive material over a semiconductor substrate. The construction also includes openings extending through the first electrically conductive material and into the semiconductor substrate. A second electrically conductive material is formed within the openings and over the first electrically conductive material and is in electrical contact with the first electrically conductive material. The second electrically conductive material is subjected to anodic dissolution while the first electrically conductive material is electrically connected to a power source. The second electrically conductive material within the openings becomes electrically isolated from the first electrically conductive material as the dissolution progresses, and some of the second electrically conductive material remains within the openings in the substrate as spaced conductive regions after the anodic dissolution.

REFERENCES:
patent: 5763306 (1998-06-01), Tsai
patent: 6037212 (2000-03-01), Chao
patent: 6171902 (2001-01-01), Ida
patent: 6458654 (2002-10-01), Claimpitt
patent: 6555429 (2003-04-01), Matsui et al.
patent: 6703272 (2004-03-01), Taylor et al.

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