Semiconductor device includes gate insulating film having a...

Details Semiconductor device includes gate insulating film having a... Semiconductor device includes gate insulating film having a...

2005-09-27

2005-09-27

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000

Reexamination Certificate

active

06949425

ABSTRACT:
A semiconductor device comprising a semiconductor substrate and a MOSFET provided on the semiconductor substrate, the MOSFET including a gate insulating film and a gate electrode provided on the gate insulating film, wherein the gate insulating film has a higher dielectric constant in a side contacting the semiconductor substrate than in a side contacting the gate electrode.

REFERENCES:
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6303481 (2001-10-01), Park
patent: 6576967 (2003-06-01), Schaeffer et al.
patent: 6841439 (2005-01-01), Anthony et al.
patent: 2002/0047141 (2002-04-01), Teramoto
patent: 11-135774 (1999-05-01), None
patent: 2000-3885 (2000-01-01), None
patent: 2002-203958 (2002-07-01), None
patent: 2003-234471 (2003-08-01), None
patent: WO 00/49643 (2000-08-01), None
Yudong Kim, et al. “Conventional n-channel MOSFET devices using single layer HfO2and ZrO2as high-k gate dielectrics with polysilicon gate electrode”, IEDM, 01-455, pp. 455-458.

Affiliated with

Also associated with

Rating

Semiconductor device includes gate insulating film having a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device includes gate insulating film having a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device includes gate insulating film having a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3405687