Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-05-17

2005-05-17

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S291000, C438S305000

Reexamination Certificate

active

06893928

ABSTRACT:
To provide a cavity in the portion of the silicon substrate which lies beneath the channel region of the MOS transistor.

REFERENCES:
patent: 4169000 (1979-09-01), Riseman
patent: 5466630 (1995-11-01), Lur
patent: 5658811 (1997-08-01), Kimura et al.
patent: 5666000 (1997-09-01), Dusablon, Sr. et al.
patent: 5856225 (1999-01-01), Lee et al.
patent: 5929508 (1999-07-01), Delgado et al.
patent: 6005285 (1999-12-01), Gardner et al.
patent: 6074899 (2000-06-01), Voldman
patent: 60-150644 (1985-08-01), None
patent: 63-278375 (1988-11-01), None
patent: 64-22459 (1989-01-01), None
patent: 01-128442 (1989-05-01), None
patent: 2-280381 (1990-11-01), None
patent: 06-334503 (1994-02-01), None
patent: 6-120490 (1994-04-01), None
patent: 07-122750 (1995-05-01), None
patent: 09-008291 (1997-01-01), None
patent: 09-036354 (1997-02-01), None
patent: 09-321294 (1997-12-01), None
patent: 10-256362 (1998-09-01), None
S. Matsuda, et al., “Novel Corner Rounding Process for Shallow Trench Isolation Utilizing MSTS (Micro-Structure Transformation of Silicon);” IEDM Tech. Digest; pp. 137-140, 1998.
Extended Abstracts (The 46thSpring Meeting, 1999) The Japan Society of Applied Physics and Related Socieites; T. Sato et al.; 28p-YF-6, p. 812, 1999 “Micro Structure Transformation of Silicon (3)—Transformation Control by the Annealing Pressure”.
T. Sato, et al., “Trench Transformation Technology Using Hydrogen Annealing for Realizing Highly Reliable Device Structure with Thin Dielectric Films;” VLSI Tech. Digest, pp. 206-207, 1998.
Extended Abstracts (The 59thAutumn Meeting, 1998) The Japan Society of Applied Physics; T. Sato et al., 16p-YB-15, p. 757, 1998 “Micro Structure Transformation of Silicon: MSTS(1)—Transformation and Application Using Silicon Migration”.
Extended Abstracts (The 59thAutumn Meeting, 1998) The Japan Society of Applied Physics; K. Mitsutake et al., 16p-YB-16, p. 757, 1998 “Micro Structure Transformation of Silicon: MSTS(2)—Theoretical Investigation”.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3405560