Insulative cap for laser fusing

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S540000, C438S132000

Reexamination Certificate

active

06946379

ABSTRACT:
A semiconductor device having at least one fuse and an alignment mark formed therein. An etch resistant layer over the surface of the fuse and alignment mark, which provides a uniform passivation thickness for use in conjunction with laser fuse deletion processes.

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IBM Technical Disclosure Bulletin, vol. 32, No. 3A, Aug. 1989, Fuse Structure for Wide Fuse Materials Choice, pp. 438-439.
Silicon Nitride Coatings on Copper, Audisio et al., vol. 119, No. 4, Apr. 1972, Electrochemical Society, pp. 408-411.

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