Method to improve the uniformity and reduce the surface...

Details Method to improve the uniformity and reduce the surface... Method to improve the uniformity and reduce the surface...

2005-09-06

2005-09-06

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S787000, C438S791000

Reexamination Certificate

active

06939816

ABSTRACT:
The instant invention is a method for forming a smooth interface between the upper surface of a silicon substrate and a dielectric layer. The invention comprises forming a thin amorphous region (180) on the upper surface (170) of a silicon substrate prior to forming the dielectric layer on the upper silicon surface.

REFERENCES:
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patent: 6297172 (2001-10-01), Kashiwagi
patent: 6306774 (2001-10-01), Ping et al.
patent: 6348367 (2002-02-01), Ohtani et al.
patent: 6475815 (2002-11-01), Nambu et al.
patent: 06097101 (1994-04-01), None
patent: 2001003691 (2001-01-01), None
Wolf, Stanley et al., “Silicon Procesing for the VLSI Era”, vol. 1, 1986 by Lattice Press, pp. 215-216.

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