Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-01
2005-03-01
Pert, Evan (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
06861345
ABSTRACT:
A method of forming conductive structures on the contact pads of a substrate,such as a semiconductor die or a printed circuit board. A solder mask is secured to an active surface of the substrate. Apertures through the solder mask are aligned with contact pads on the substrate. The apertures may be preformed or formed after a layer of the material of which the solder mask is comprised has been disposed on the substrate. Conductive material is disposed in and shaped by the apertures of the solder mask to form conductive structures in communication with the contact pads exposed to the apertures. Sides of the conductive structures are exposed through the solder mask, either by removing the solder mask from the substrate or by reducing the thickness of the solder mask. The present invention also includes semiconductor devices formed during different stages of the method of the present invention.
REFERENCES:
patent: 4172907 (1979-10-01), Mones et al.
patent: 4763829 (1988-08-01), Sherry
patent: 4922321 (1990-05-01), Arai et al.
patent: 5246880 (1993-09-01), Reele et al.
patent: 5361695 (1994-11-01), Takagi et al.
patent: 5388327 (1995-02-01), Trabucco
patent: 5442852 (1995-08-01), Danner
patent: 5460316 (1995-10-01), Hefele
patent: 5473197 (1995-12-01), Idaka et al.
patent: 5492235 (1996-02-01), Crafts et al.
patent: 5497938 (1996-03-01), McMahon et al.
patent: 5504277 (1996-04-01), Danner
patent: 5510156 (1996-04-01), Zhao
patent: 5519580 (1996-05-01), Natarajan et al.
patent: 5539153 (1996-07-01), Schwiebert et al.
patent: 5565033 (1996-10-01), Gaynes et al.
patent: 5586715 (1996-12-01), Schwiebert et al.
patent: 5587342 (1996-12-01), Lin et al.
patent: 5593080 (1997-01-01), Teshima et al.
patent: 5597469 (1997-01-01), Carey et al.
patent: 5600180 (1997-02-01), Kusaka et al.
patent: 5637832 (1997-06-01), Danner
patent: 5663530 (1997-09-01), Schueller et al.
patent: 5672542 (1997-09-01), Schwiebert et al.
patent: 5674595 (1997-10-01), Busacco et al.
patent: 5676853 (1997-10-01), Alwan
patent: 5689091 (1997-11-01), Hamzehdoost et al.
patent: 5717252 (1998-02-01), Nakashima et al.
patent: 5735452 (1998-04-01), Yu et al.
patent: 5741624 (1998-04-01), Jeng et al.
patent: 5751068 (1998-05-01), McMahon et al.
patent: 5787580 (1998-08-01), Woo
patent: 5796038 (1998-08-01), Manteghi
patent: 5811184 (1998-09-01), Anderson et al.
patent: 5818697 (1998-10-01), Armezzani et al.
patent: 5880017 (1999-03-01), Schwiebert et al.
patent: 6-177527 (1994-06-01), None
Ball Michael B.
Cobbley Chad A.
Micro)n Technology, Inc.
Pert Evan
TraskBritt
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