Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-12
2005-04-12
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C438S703000, C438S775000, C438S757000, C438S791000, C438S761000
Reexamination Certificate
active
06878585
ABSTRACT:
A method of forming a capacitor includes forming first and second capacitor electrodes over a substrate. A capacitor dielectric region is formed intermediate the first and second capacitor electrodes, and includes forming a silicon nitride comprising layer over the first capacitor electrode. A silicon oxide comprising layer is formed over the silicon nitride comprising layer. The silicon oxide comprising layer is exposed to an activated nitrogen species generated from a nitrogen-containing plasma effective to introduce nitrogen into at least an outermost portion of the silicon oxide comprising layer. Silicon nitride is formed therefrom effective to increase a dielectric constant of the dielectric region from what it was prior to said exposing. Capacitors and methods of forming capacitor dielectric layers are also disclosed.
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DeBoer Scott J.
Moore John T.
Micro)n Technology, Inc.
Smith Matthew
Wells St. John P.S.
Yevsikov Victor V
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