High permittivity silicate gate dielectric

Details High permittivity silicate gate dielectric High permittivity silicate gate dielectric

2005-01-11

2005-01-11

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S763000

Reexamination Certificate

active

06841439

ABSTRACT:
A field effect semiconductor device comprising a high permittivity silicate gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate20having a semiconducting channel region24formed therein. A metal silicate gate dielectric layer36is formed over this substrate, followed by a conductive gate38. Silicate layer36may be, e.g., hafnium silicate, such that the dielectric constant of the gate dielectric is significantly higher than the dielectric constant of silicon dioxide. However, the silicate gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability. The present invention includes methods for depositing both amorphous and polycrystalline silicate layers, as well as graded composition silicate layers.

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