Resist patterning process

Details Resist patterning process Resist patterning process

2005-04-12

2005-04-12

Huff, Mark F. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S330000, C430S270100, C430S296000, C525S326800

Reexamination Certificate

active

06878508

ABSTRACT:
A resist patterning process is provided comprising the steps of (a) applying a resist composition onto a substrate to form a resist film, (b) prebaking the resist film, (c) exposing the prebaked resist film to a pattern of radiation, (d) post-exposure baking the exposed resist film, (e) developing the resist film to form a resist pattern, and (f) post baking the resist pattern for causing thermal flow. The resist composition contains a polymer comprising structural units of formula [I] in a backbone and having acid labile groups on side chains as a base resin and a photoacid generator.X1and X2are —O—, —S—, —NR—, —PR— or —CR2—, R is H or C1-20alkyl, and m is 0 or an integer of 1 to 3. The invention is effective for improving the degree of integration of semiconductor LSI.

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