Method of fabricating an ESD device on SOI

Details Method of fabricating an ESD device on SOI Method of fabricating an ESD device on SOI

2005-03-15

2005-03-15

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S200000, C438S231000, C438S250000, C438S278000, C438S304000

Reexamination Certificate

active

06867103

ABSTRACT:
A method to form transistors having improved ESD performance in the manufacture of an integrated circuit device is achieved. The method includes providing a SOI substrate with a doped silicon layer and a buried oxide layer. The doped silicon layer has a first conductivity type and overlies the buried oxide layer. Ions are implanted into the SOI substrate to form higher concentration regions in the doped silicon layer. The higher concentration regions have the first conductivity type and are formed substantially below the top surface of the doped silicon layer. MOS gates are formed. These MOS gates include an electrode layer overlying the doped silicon layer with a gate oxide layer therebetween. Source and drain regions are formed in the doped silicon layer to complete the transistors in the manufacture of the integrated circuit device. The source and drain regions contact the higher concentration regions and have a second conductivity type.

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