Method of fabricating enhanced EPROM structures with...

Details Method of fabricating enhanced EPROM structures with... Method of fabricating enhanced EPROM structures with...

2005-07-26

2005-07-26

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S297000

Reexamination Certificate

active

06921690

ABSTRACT:
An EPROM structure includes a NMOS transistor integrated with a capacitor. The terminal names of the NMOS transistor follow the conventional nomenclature: drain, source, body and gate. The gate of the NMOS transistor is connected directly and exclusively to one of the capacitor plates. In this configuration, the gate is now referred to as the “floating gate”. The remaining side of the capacitor is referred to as the “control gate”.

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