Method of making a metal oxide capacitor, including a...

Details Method of making a metal oxide capacitor, including a... Method of making a metal oxide capacitor, including a...

2005-01-25

2005-01-25

Lee, Eddie (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000, C438S250000

Reexamination Certificate

active

06846711

ABSTRACT:
A semiconductor device includes an interlevel insulating film, a contact plug, a barrier film, a first electrode, a capacitor insulating file, and a second electrode. The interlevel insulating film is formed on a semiconductor substrate. The contact plug extends through the interlevel insulating film and is formed from a conductive material. The barrier film is formed from a tungsten-based material on the upper surface of the contact plug. The first electrode is connected to the contact plug via the barrier film and formed from a metal material on the interlevel insulating film. The capacitor insulating film is formed from an insulating metal oxide on the first electrode. The second electrode is insulated by the capacitor insulating film and formed on the surface of the first electrode.

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