Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-26
2005-04-26
Lebentritt, Michael (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S629000, C257S695000
Reexamination Certificate
active
06885051
ABSTRACT:
A method of forming minimally spaced apart MRAM structures is disclosed. A photolithography technique is employed to define patterns an integrated circuit, the width of which is further reduced by etching to allow formation of patterns used to etch digit line regions with optimum critical dimension between any of the two digit line regions. Subsequent pinned and sense layers of MRAM structures are formed over the minimally spaced digit regions.
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Doan Trung T.
Durcan D. Mark
Earl Ren
Keller Dennis
Lee Roger
Dickstein , Shapiro, Morin & Oshinsky, LLP
Lebentritt Michael
Micro)n Technology, Inc.
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