Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-04
2005-01-04
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S386000
Reexamination Certificate
active
06838334
ABSTRACT:
A method of forming a buried collar on the sidewall of a trench in a semiconductor substrate including: (a) providing the trench in the semiconductor substrate, the trench having a first dielectric layer formed on a sidewall in a upper region of the trench and a conductive material filling a lower region of the trench, the conductive material covering a lower portion of the first dielectric layer; (b) removing the first dielectric layer not covered by the conductive material; (c) forming a second dielectric layer on the exposed sidewall of the upper region and on a top surface of the conductive material; (d) removing an uppermost portion of the second dielectric layer from the sidewall in the upper region; (e) forming a third dielectric layer on the exposed sidewall of the upper region; and (f) increasing the thickness of the second dielectric layer to form the buried collar.
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Gluschenkov Oleg
Sung Chung-Yung
Tews Helmut H.
Capella Steven
Infineon Technologies North America Corp.
Kennedy Jennifer M.
Niebling John F.
Schmeiser Olsen & Watts
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