Method of fabricating a robust gate dielectric using a...

Details Method of fabricating a robust gate dielectric using a... Method of fabricating a robust gate dielectric using a...

2005-03-08

2005-03-08

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S576000

Reexamination Certificate

active

06864145

ABSTRACT:
A method is described for selectively treating the properties of a gate dielectric near corners of the gate without altering the gate dielectric in a center region of a gate channel. The method includes providing a structure having a gate opening and depositing a layer of dielectric with a high dielectric constant on a bottom surface and side walls of the gate opening. The corner regions of the high dielectric constant layer formed adjacent to the bottom surface and the side walls of the gate opening are selectively treated without altering the center region of the high dielectric constant layer formed at the bottom surface of the gate opening.

REFERENCES:
patent: 6316318 (2001-11-01), Kapoor
patent: 6562687 (2003-05-01), Deleonibus et al.
patent: 6716322 (2004-04-01), Hedge et al.

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