Post thermal treatment methods of forming high dielectric...

Details Post thermal treatment methods of forming high dielectric... Post thermal treatment methods of forming high dielectric...

2005-04-05

2005-04-05

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S216000, C438S240000, C438S261000, C438S287000, C438S761000, C438S785000

Reexamination Certificate

active

06875678

ABSTRACT:
High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.

REFERENCES:
patent: 6251761 (2001-06-01), Rodder et al.
patent: 6451641 (2002-09-01), Halliyal et al.
patent: 6566205 (2003-05-01), Yu et al.
patent: 20020153579 (2002-10-01), Yamamoto
patent: 20030234417 (2003-12-01), Raaijmakers et al.

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