Multistep cure technique for spin-on-glass films

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S221000, C438S424000, C438S435000, C438S427000, C438S787000, C438S788000

Reexamination Certificate

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06878644

ABSTRACT:
A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.

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