Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-04-12
2005-04-12
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S221000, C438S424000, C438S435000, C438S427000, C438S787000, C438S788000
Reexamination Certificate
active
06878644
ABSTRACT:
A method of filling a plurality of trenches etched in a substrate. In one embodiment the method includes depositing a layer of spin-on glass material over the substrate and into the plurality of trenches; curing the layer of spin-on glass material by exposing the spin-on glass material to electron beam radiation at a first temperature for a first period and subsequently exposing the spin-on glass material to an electron beam at a second temperature for a second period, where the second temperature is greater than the first temperature. The method concludes by depositing a layer of silica glass over the cured spin-on glass layer using a chemical vapor deposition technique.
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Cox Michael S.
Cui Zhenjiang
Demos Alexandros T.
Elsheref Khaled
Roberts Rick J.
Applied Materials Inc.
Isaac Stanetta
Niebling John F.
Townsend & Townsend & Crew
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