Mixed-mode process

Details Mixed-mode process Mixed-mode process

2005-05-03

2005-05-03

Zarneke, David (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S514000

Reexamination Certificate

active

06887748

ABSTRACT:
A mixed-mode process comprises to provide a substrate first. A surface of the substrate comprises at least a first conductor in a first conductive region, at least a second conductor in a second conductive region, at least a metal-oxide-semiconductor (MOS) transistor in a MOS transistor region, and at least a capacitor in a capacitor region. A mask is then formed on the substrate to expose the second conductor. A first etching process is thereafter performed to remove a specific thickness of the second conductor followed by a first ion implantation process to dope the second conductor with the first type dopants.

REFERENCES:
patent: 5918119 (1999-06-01), Huang
patent: 6156602 (2000-12-01), Shao et al.

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