Protective layers formed on semiconductor device components...

Details Protective layers formed on semiconductor device components... Protective layers formed on semiconductor device components...

2005-04-26

2005-04-26

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

C257S701000

Reexamination Certificate

active

06885108

ABSTRACT:
A method for forming protective layers on a plurality of semiconductor device components carried by a fabrication substrate includes applying a layer of protective material to surfaces of the semiconductor device components. The layer of protective material is then severed and the fabrication substrate is at least partially severed. Cracks and delaminated regions that are formed during severing are then healed. The protective material may be applied as a preformed sheet or in a liquid form, then at least partially cured or hardened. If a curable polymer is employed as the protective material, it may be partially cured before severing is effected, then self-healed before being fully cured. Alternatively, a thermoplastic material may be used as the protective material, with healing being effected by heating at least regions of the thermoplastic material. Semiconductor device components, including chip-scale packages, which are formed by the method are also disclosed.

REFERENCES:
patent: 5977641 (1999-11-01), Takahashi et al.
patent: 6064114 (2000-05-01), Higgins, III
patent: 6187615 (2001-02-01), Kim et al.

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