Semiconductor with contact contacting diffusion adjacent...

Details Semiconductor with contact contacting diffusion adjacent... Semiconductor with contact contacting diffusion adjacent...

2005-09-06

2005-09-06

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C257S900000

Reexamination Certificate

active

06940134

ABSTRACT:
Methods of forming a contact to a gate electrode or substrate despite misalignment of the contact opening due to lithographic techniques, and a semiconductor having such a contact. Silicide can be created on the gate and/or diffusion using the invention.

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