Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-13
2005-09-13
Kang, Donghee (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S003000, C438S238000, C438S393000, C438S399000, C257S295000, C257S296000, C257S303000, C257S306000
Reexamination Certificate
active
06943080
ABSTRACT:
A method of manufacturing semiconductor device including a capacitor including a pair of electrodes and a ferroelectric flu with ferroelectricity sandwiched therebetween, by depositing the ferroelectric film on first substrate; forming the capacitor by grinding the ferroelectric film and forming the electrodes so that the electrodes are perpendicular to a direction of a polarization axis of the ferroelectric film; forming a first interlayer insulating film covering a surface of the first substrate and the capacitor; forming a transistor on a second substrate, the transistor including a ate electrode and a diffusion region; forming a second interlayer insulating film covering a surface of the second substrate and the transistor; flattening surfaces of the first and second interlayer insulating films by chemical mechanical polishing; integrating the first and second substrates by joining the flattened surfaces of the first and second interlayer insulating films; and removing the first substrate.
REFERENCES:
patent: 2584639 (1996-11-01), None
patent: 8-340087 (1996-12-01), None
patent: 2738012 (1998-01-01), None
patent: 11-103024 (1999-04-01), None
patent: 2001-102543 (2001-04-01), None
Fujitsu Limited
Kang Donghee
Westerman Hattori Daniels & Adrian LLP
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