Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-22
2005-03-22
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S770000
Reexamination Certificate
active
06869846
ABSTRACT:
A structure including a first device and a second device, wherein the second device has a dielectric thickness greater than the dielectric thickness of the first device, and the method of so forming the structure.
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Hsu Louis L.
Mandelman Jack A.
Radens Carl J.
Strub Richard A.
Tonti William R.
Henkler Richard A.
International Business Machines - Corporation
Pham Hoai
Schmeiser Olsen & Watts
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