Forming electronic structures having dual dielectric...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S770000

Reexamination Certificate

active

06869846

ABSTRACT:
A structure including a first device and a second device, wherein the second device has a dielectric thickness greater than the dielectric thickness of the first device, and the method of so forming the structure.

REFERENCES:
patent: 4327476 (1982-05-01), Iwai et al.
patent: 4641279 (1987-02-01), Kimura et al.
patent: 4651306 (1987-03-01), Yanagisawa
patent: 4912535 (1990-03-01), Okumura
patent: 4931849 (1990-06-01), Tajima
patent: 5776817 (1998-07-01), Liang
patent: 6235590 (2001-05-01), Daniel et al.
patent: 63-199456 (1988-08-01), None
patent: 1-119057 (1989-05-01), None
patent: 6-5809 (1994-01-01), None
Extending Trench Dram Technology To 0.15μm GroundRule And Beyond, Rupp et al., IEDM 99, pp. 33-36.
A Fully Planarized 0.25μm CMOS Technology For 256Mbit Dram And Beyond, Bronner et al., 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 15-16.
A 0.6μm2256 Mb Trench Dram Cell With Self-Aligned BuriEd STrap (BEST), Nesbit et al., IEDM 93, pp. 627-630.

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