Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-11
2005-01-11
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000
Reexamination Certificate
active
06841828
ABSTRACT:
A semiconductor device comprises a semiconductor substrate having a first insulator, and a semiconductor channel region formed on the first insulator, wherein the semiconductor channel region comprising at least two first regions both having the first conductivity type, a second region of the conductivity type opposite to the first conductivity type, the second region being provided between the two first regions, a second insulator formed on the second region, a gate electrode formed on the second insulator, a third region having the same conductivity type as that of the second region, the third region being electrically conductive to the second region, a third insulator formed on the third region, the third insulator having a width narrower than the widths of an isolation region for isolating the semiconductor formation region, and a fourth region of the same conductivity type as that of the third region, the fourth region being electrically conductive to the third region.
REFERENCES:
patent: 5128274 (1992-07-01), Yabu et al.
patent: 5483482 (1996-01-01), Yamada et al.
patent: 5652454 (1997-07-01), Iwamatsu et al.
patent: 5729039 (1998-03-01), Beyer et al.
patent: 5767549 (1998-06-01), Chen et al.
patent: 5780899 (1998-07-01), Hu et al.
patent: 5821575 (1998-10-01), Mistry et al.
patent: 58-124243 (1983-07-01), None
patent: 61-34978 (1986-02-01), None
patent: 61-039958 (1986-03-01), None
patent: 63-241967 (1988-10-01), None
patent: 06-085262 (1994-03-01), None
patent: 08-125187 (1996-05-01), None
W. Chen, Y. Taur, D. Sadana, K.A. Jenkins, J.Sun, and S. Cohen, “Suppression of the SOI Floating-body Effetcs by Linked-body Device Structure”, Symposium on VLSI Technology Digest of Technical Papers, pp. 92-93, 1996.
Robert F. Pierret, Modular Series on Solid State Devices, vol. IV Field Effect Devices, 1983, Addison-Wesley Publishing Company, pp. 94-98.
Kawanaka Shigeru
Yamada Takashi
Hogan & Hartson LLP
Jr. Carl Whitehead
Vesperman William C.
LandOfFree
Method of manufacturing SOI element having body contact does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing SOI element having body contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing SOI element having body contact will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3371315