Semiconductor device having a conductive layer with a cobalt...

Details Semiconductor device having a conductive layer with a cobalt... Semiconductor device having a conductive layer with a cobalt...

2005-04-12

2005-04-12

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S720000, C257S508000

Reexamination Certificate

active

06878632

ABSTRACT:
A semiconductor device capable of suppressing diffusion of copper at an interface between a copper wire and a cap film to enhance an electromigration resistance to ensure reliability of the copper wire, and a manufacturing method thereof are provided. The semiconductor device according to the present invention comprises an insulating film (12) formed on a substrate (11), a concave portion (13) (for example, a groove) formed in the insulating film, a conductive layer (15) embedded in the concave portion through a barrier layer (14), and a cobalt tungsten phosphorus coating (16) to connect with the barrier layer on the side of the conductive layer and to coat the conductive layer on the opening side of the concave portion.

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S. Lopatin et al., Integration of Electroless Cu and CoWP Multilyaers in Damascene Process,Cornell University, vol. 97-8, pp. 186-195.

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