Methods for use in forming a capacitor and structures...

Details Methods for use in forming a capacitor and structures... Methods for use in forming a capacitor and structures...

2005-05-10

2005-05-10

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S396000

Reexamination Certificate

active

06890814

ABSTRACT:
A method for use with the formation of a capacitor includes providing a capacitor structure by forming a first electrode on a portion of a substrate assembly, forming a high dielectric material over at least a portion of the first electrode, and forming a second electrode over the high dielectric material. An additional layer may be formed over at least a portion of the second electrode. The portion of the substrate assembly on which the first electrode is formed and/or the layer formed over the second electrode are formed of an excess oxygen containing material.

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