LDMOS transistors and methods for making the same

Details LDMOS transistors and methods for making the same LDMOS transistors and methods for making the same

2005-05-31

2005-05-31

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S227000, C438S297000, C438S306000, C438S519000, C438S524000, C257SE21417

Reexamination Certificate

active

06900101

ABSTRACT:
LDMOS transistor devices and fabrication methods are provided, in which additional dopants are provided to region of a substrate near a thick dielectric between the channel and the drain to reduce device resistance without significantly impacting breakdown voltage. The extra dopants are added by implantation prior to formation of the thick dielectric, such as before oxidizing silicon in a LOCOS process or following trench formation and before filling the trench in an STI process.

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