Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Patent
1994-09-21
1997-09-02
Fourson, George
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
438791, H01L 21318
Patent
active
056630875
ABSTRACT:
The present invention provides a method for forming a silicon nitride film used for a capacitor dielectric film on a silicon substrate and a poly-silicon layer which comprises steps of forming a first thin silicon nitride film by a rapid thermal nitrogen process and forming a second silicon nitride film on the first thin silicon nitride film to a required thickness by LPCVD. In the LPCVD, a gas which reduces surface reactions is introduced to a growing surface of the silicon nitride film by a means different from a means supplying starting material gases of the silicon nitride film, so as to improve a break down voltage and leakage current of the capacitor silicon nitride film.
REFERENCES:
"The Effect of Surface Roughness of Si.sub.3 N.sub.4 Films on TDDB Characteristics of ONO Films", Tanaka et al, IEEE, 1992, pp. 31-36.
"Ultrathin Silicon Nitride Films Prepared by Combining Rapid Thermal Nitridation with Low-Pressure Chemical Vapor Deposition", Ando et al, Appl. Phys. Lett., vol. 59, No. 9, Aug. 26, 1991, pp. 1081-1083.
Fourson George
NEC Corporation
LandOfFree
Method for forming silicon nitride film having low leakage curre does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming silicon nitride film having low leakage curre, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming silicon nitride film having low leakage curre will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-307635