Method of forming a capacitor

Details Method of forming a capacitor Method of forming a capacitor

2001-02-07

2002-05-28

Tsai, Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06395602

ABSTRACT:

TECHNICAL FIELD
This invention relates generally to capacitor formation in semiconductor wafer processing, and to resultant capacitor constructions.
BACKGROUND OF THE INVENTION
As DRAMs increase in memory cell density, there is a continuing challenge to maintain sufficiently high storage capacitance despite decreasing cell area. Additionally, there is a continuing goal to further decrease cell area.
The principal way of increasing cell capacitance is through cell structure techniques. Such techniques include three-dimensional cell capacitors, such as trenched or stacked capacitors. This invention concerns stacked capacitor cell constructions, including what are commonly known as crown or cylindrical container stacked capacitors.


REFERENCES:
patent: 4558509 (1985-12-01), Tiwari
patent: 4568565 (1986-02-01), Gupta et al.
patent: 4742018 (1988-05-01), Kimura et al.
patent: 5005072 (1991-04-01), Gonzalez
patent: 5006481 (1991-04-01), Chan et al.
patent: 5021357 (1991-06-01), Taguchi et al.
patent: 5023683 (1991-06-01), Yamada
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5061651 (1991-10-01), Ino
patent: 5071781 (1991-12-01), Seo et al.
patent: 5103275 (1992-04-01), Miura et al.
patent: 5116776 (1992-05-01), Chan et al.
patent: 5130172 (1992-07-01), Hicks et al.
patent: 5135883 (1992-08-01), Bae et al.
patent: 5139825 (1992-08-01), Gordon et al.
patent: 5160987 (1992-11-01), Pricer et al.
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5168073 (1992-12-01), Gonzalez et al.
patent: 5170233 (1992-12-01), Liu et al.
patent: 5216267 (1993-06-01), Jin et al.
patent: 5223729 (1993-06-01), Kudoh et al.
patent: 5290726 (1994-03-01), Kim
patent: 5300321 (1994-04-01), Nakano et al.
patent: 5320878 (1994-06-01), Maya
patent: 5330614 (1994-07-01), Ahn
patent: 5403620 (1995-04-01), Kaesz et al.
patent: 5444010 (1995-08-01), Park et al.
patent: 5464786 (1995-11-01), Figura et al.
patent: 5508218 (1996-04-01), Jun
patent: 5622882 (1997-04-01), Yee
patent: 5631184 (1997-05-01), Ikemasu et al.
patent: 5677222 (1997-10-01), Tseng
patent: 5684316 (1997-11-01), Lee
patent: 5907170 (1999-05-01), Forbes et al.
patent: 5930640 (1999-07-01), Kenney
patent: 5945704 (1999-08-01), Schrems et al.
patent: 5952688 (1999-09-01), Madan
patent: 5953254 (1999-09-01), Pourkeramati
patent: 5968686 (1999-10-01), Yamada et al.
patent: 6025248 (2000-02-01), Kim et al.
patent: 6025624 (2000-02-01), Figura
patent: 6037620 (2000-03-01), Hoenigschmidt et al.
patent: 6150687 (2000-11-01), Noble et al.
Morihara, Toshinori, et al., “Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory”, Jpn. J. Appl. Phys., vol. 33 (1994) Pt. 1, No. 8.
Watanabe, Hidehiro., et al., “Stacked Capacitor Cells for High-Density RAMs”, IEDM 88, pp. 600-603.
S.H. Woo., et al., “Selective Etching Technology of in-situ P Doped Poly-Si (SEDOP) for High Density DRAM Capacitors”, IEEE, 1994, pp. 25-26.
Conrad, J.R., et al., “Ion Beam Assisted Coating And Surface Modification With Plasma Source Ion Implantation”, J. Vac. Sci. Technol. A 8 (4), Jul./Aug., 1990, 3146-3151.
Niemer, Burkhard, et al., “Organmetallic Chemical Vapor Deposition Of Tungsten Metal, And Suppression Of Carbon Incorporation By Codeposition Of Platinum”, University of California, Dept. of Chemistry and Biochemistry, May, 1992.
Inoue, S.,, et al., “A Spread Stacked Capacitor (SSC) Cell For 64Mbit DRAMs”, IEEE 1989, pp. 31-34 (2.3.1-2.3.4).
Conrad, J.R. et al., “Ion Beam Assisted Coating And Surface Modification With Plasma Source Ion Impantation”, J. Vac. Sci. Technol. A 8 (4), Jul./Aug., 1990, 3146-3151.
T.Morihara et al., “Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory”, Aug. 19, 1994, Jpn. J. Appl. Phys. vol. 33 (1994), Pt. 1, No. 8, pp. 14-19.
S.Woo et al., “Selective Etching Technology of in-situ P Doped Poly-Si (SEDOP) for High Densisty DRAM Capacitors”, 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 25-26.
H.Watanabe et al., “Stacked Capacitor Cells for High-density dynamic RAMs”, IEDM 1988, pp. 600-603.
Conrad, J.R. et al., “Ion Beam Assisted Coating and Surface Modification With Plasma Source Ion Implantation”, J.Vac.Sci.Technol. A8(4), Jul./Aug. 1990, 3146-3151.
Morihara, T. et al., “Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory”, Aug. 19, 1994, Jpn.J.Appl.Phys. vol. 33 (1994), Pt. 1, No. 8, pp. 14-19.
Woo, S. et al., “Selective Etching Technology of In-Situ P Doped Poly-Si (SEDOP) for High Density DRAM Capacitors”, 1994 Sympos. on VLSI Technology Digest of Technical Papers, pp. 25-26.
Watanabe, H. et al., “Stacked Capacitor Cells for High-Density Dynamic RAMs”, IEDM 1998, pp. 600-603.
Silicon Processing For The VLSI Era(Volumn 1)Process Technology, Stanley Wolf Ph.D. & Richard N. Tauber Ph.D., 1986, 3 pages.
Ema, T, et al., “3-Dimensional Stacked Capacitor Cell For 16M And 64M DRAMs,” MOS Division, Fujitsu Limited, IEEE 1988, pp. 592-595.
Temmler, D., “Multilayer Vertical Stacked Capacitors (MVSTC) For 64Mbit and 256Mbig DRAMs”, Article, no date, pp. 13-14.
Niemer, B. et al., “Organometallic chemical vapor deposition of tungsten metal, and suppression of carbon incorporation by codeposition of platinum”, Article, University of California, Los Angeles, CA, Dept. of Chemistry and Biochemistry, published Aug. 4, 1992, 3 pgs.
Inoue, S. et al., “A Spread Stacked Capacitor (SSC) Cell For 64MBIT DRAMs”, IEEE 1989, pp. 31-34 (2.3.1-2.3.4).
Temmler, D., “Multilayer Vertical Stacked Capacitors (MVSTC) for 64Mbit and 256Mbit DRAMs”, Article, Institute of Semiconductor Physics, Germany, no date, 2 pgs.

Affiliated with

Also associated with

Rating

Method of forming a capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2899206