Semiconductor device having LDD-type source/drain regions...

Details Semiconductor device having LDD-type source/drain regions... Semiconductor device having LDD-type source/drain regions...

2008-06-17

2008-06-17

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000

Reexamination Certificate

active

07388264

ABSTRACT:
A semiconductor device having LDD-type source/drain regions and a method of fabricating the same are provided. The semiconductor device includes at least a pair of gate patterns disposed on a semiconductor substrate and LDD-type source/drain regions disposed at both sides of the gate patterns. The substrate having the gate patterns and the LDD-type source/drain regions is covered with a conformal etch stop layer. The etch stop layer is covered with an interlayer insulating layer. The LDD-type source/drain region is exposed by a contact hole that penetrates the interlayer insulating layer and the etch stop layer. The method of forming the LDD-type source/drain regions and the etch stop layer includes forming low-concentration source/drain regions at both sides of the gate patterns and forming the conformal etch stop layer on the substrate having the low-concentration source/drain regions. Gate spacers are then formed on the sidewalls of the gate patterns. Using the gate patterns and the gate spacers as implantation masks, impurity ions are implanted into the semiconductor substrate to form high-concentration source/drain regions. The spacers are then selectively removed. An interlayer insulating layer is formed on the substrate where the spacers are removed.

REFERENCES:
patent: 6180464 (2001-01-01), Krivokapic et al.
patent: 2001/0009805 (2001-07-01), Ha et al.
patent: 2002/0132403 (2002-09-01), Hung et al.
patent: 2004/0175919 (2004-09-01), Ha et al.
patent: 2001-0004237 (2001-01-01), None
patent: 2001-0030127 (2001-04-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having LDD-type source/drain regions... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having LDD-type source/drain regions..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having LDD-type source/drain regions... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2814797